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CY7C006AV - Asynchronous Dual-Port Static RAM

Key Features

  • True dual-ported memory cells which allow simultaneous access of the same memory location.
  • 8 K / 16 K × 8 organizations (CY7C144AV/CY7C006AV).
  • 0.35-micron complementary metal oxide semiconductor (CMOS) for optimum speed/power.
  • High-speed access: 25 ns.
  • Low operating power.
  • Active: ICC = 115 mA (typical).
  • Standby: ISB3 = 10 A (typical).
  • Fully asynchronous operation.
  • Automatic power-down Logic Block Diagram R/WL CEL OEL.
  • Expandable data bus to 1.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY7C006A 16K x 8 Dual-Port Static RAM
CY7C006 (CY7C006 / CY7C016) 16K x 8/9 Dual-Port Static RAM
CY7C006V (CY7C006V - CY7C139V) Dual Port Static RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY7C138AV CY7C139AV CY7C144AV CY7C145AV CY7C006AV CY7C016AV CY7C007AV CY7C017AV 3.3 V 8 K / 16 K × 8 Asynchronous Dual-Port Static RAM CY7C144AV CY7C006AV 3.3 V 8 K / 16 K × 8 Asynchronous Dual-Port Static RAM 3.3 V 8 K / 16 K × 8 Dual-Port Static RAM Features ■ True dual-ported memory cells which allow simultaneous access of the same memory location ■ 8 K / 16 K × 8 organizations (CY7C144AV/CY7C006AV) ■ 0.