CY7C1011BV33 - 128K x 16 Static RAM

Product Overview

Cypress Semiconductor

Datasheet Details

Part number	CY7C1011BV33
Manufacturer	Cypress Semiconductor
File Size	153.93 KB
Description	128K x 16 Static RAM
Datasheet	CY7C1011BV33 Datasheet
Additional preview pages of the CY7C1011BV33 datasheet.

Product details

Description

of read and write modes.

The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

Features

3.0.
3.6V Operation.
High speed.
tAA = 12, 15 ns.
CMOS for optimum speed/power.
Low active power.
684 mW (Max. ).
Automatic power-down when deselected.
Independent control of upper and lower bits.
Available in 44-pin TSOP II (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from.

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Published: Mar 27, 2005 |