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CY7C1011DV33 - 2-Mbit (128K x 16)Static RAM

General Description

The CY7C1011DV33[1] is a high-performance CMOS Static RAM organized as 128 K words by 16 bits.

Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW.

Key Features

  • Pin-and function-compatible with CY7C1011CV33.
  • High speed.
  • tAA = 10 ns.
  • Low active power.
  • ICC = 90 mA @ 10 ns (Industrial).
  • Low CMOS standby power.
  • ISB2 = 10 mA.
  • Data Retention at 2.0 V.
  • Automatic power-down when deselected.
  • Independent control of upper and lower bits.
  • Easy memory expansion with CE and OE features.
  • Available in Pb-free 44-pin TSOP II, and 48-ball VFBGA Functional.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY7C1011BV33 128K x 16 Static RAM
CY7C1011CV33 128K x 16 Static RAM
CY7C1010DV33 2-Mbit (256 K x 8) Static RAM
CY7C1012AV33 512K x 24 Static RAM
CY7C1018DV33 1-Mbit (128 K x 8) Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY7C1011DV33 2-Mbit (128 K × 16) Static RAM 2-Mbit (128 K × 16) Static RAM Features ■ Pin-and function-compatible with CY7C1011CV33 ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 90 mA @ 10 ns (Industrial) ■ Low CMOS standby power ❐ ISB2 = 10 mA ■ Data Retention at 2.0 V ■ Automatic power-down when deselected ■ Independent control of upper and lower bits ■ Easy memory expansion with CE and OE features ■ Available in Pb-free 44-pin TSOP II, and 48-ball VFBGA Functional Description The CY7C1011DV33[1] is a high-performance CMOS Static RAM organized as 128 K words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW.