CY7C1019V33
Overview
- High speed - tAA = 10 ns
- CMOS for optimum speed/power
- Center power/ground pinout
- Automatic power-down when deselected
- Easy memory expansion with CE and OE options Functional Description The CY7C1018V33/CY7C1019V33 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O Logic Block Diagram 128K x 8 Static RAM pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under t
