Datasheet Summary
021BV33
64K x 16 Static RAM
Features
- 3.3V operation (3.0V- 3.6V)
- High speed
- tAA = 10/12/15 ns
- CMOS for optimum speed/power
- Low Active Power (L version)
- 576 mW (max.)
- Low CMOS Standby Power (L version)
- 1.80 mW (max.)
- Automatic power-down when deselected
- Independent control of upper and lower bits
- Available in 44-pin TSOP II and 400-mil SOJ
- Available in a 48-Ball Mini BGA package Writing to the device is acplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE)...