CY7C1049BN Datasheet | Cypress

512 K × 8 Static RAM Features - High speed - t AA = 17 ns - Low active power - 1073 m W (max.) - Low CMOS standby power - 2.75 m W (max.) - 2.0 V data retention (400 W at 2.0 V retention) - Automatic power-down when deselected - TTL-patible inputs and outputs - Easy memory expansion with CE and OE Features Logic Block Diagram 512 K × 8 Static RAM Functional Description The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is acplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). Reading from the device is acplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under...