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CY7C1049BN - 512K x 8 Static RAM

General Description

The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits.

Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers.

Key Features

  • High speed.
  • tAA = 17 ns.
  • Low active power.
  • 1073 mW (max. ).
  • Low CMOS standby power.
  • 2.75 mW (max. ).
  • 2.0 V data retention (400 W at 2.0 V retention).
  • Automatic power-down when deselected.
  • TTL-compatible inputs and outputs.
  • Easy memory expansion with CE and OE features Logic Block Diagram CY7C1049BN 512 K × 8 Static RAM Functional.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY7C1049BNV33 512K x 8 Static RAM
CY7C1049B 512K x 8 Static RAM
CY7C1049BV33 512K x 8 Static RAM
CY7C1049 512K x 8 Static RAM
CY7C1049 512K x 8 Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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512 K × 8 Static RAM Features ■ High speed ❐ tAA = 17 ns ■ Low active power ❐ 1073 mW (max.) ■ Low CMOS standby power ❐ 2.75 mW (max.) ■ 2.0 V data retention (400 W at 2.0 V retention) ■ Automatic power-down when deselected ■ TTL-compatible inputs and outputs ■ Easy memory expansion with CE and OE features Logic Block Diagram CY7C1049BN 512 K × 8 Static RAM Functional Description The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW.