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CY7C1069DV33 - 16-Mbit (2M x 8) Static RAM

General Description

The CY7C1069DV33 is a high performance CMOS Static RAM organized as 2,097,152 words by 8 bits.

To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW.

Key Features

  • High speed.
  • tAA = 10 ns.
  • Low active power.
  • ICC = 175 mA at 100 MHz.
  • Low complementary metal oxide semiconductor (CMOS) standby power.
  • ISB2 = 25 mA.
  • Operating voltages of 3.3 ± 0.3 V.
  • 2.0 V data retention.
  • Automatic power-down when deselected.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • Easy memory expansion with CE1 and CE2 features.
  • Available in Pb-free 54-pin thin small outline package (TSOP) Type II and 48-ball.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY7C1069DV33 16-Mbit (2 M × 8) Static RAM 16-Mbit (2 M × 8) Static RAM Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at 100 MHz ■ Low complementary metal oxide semiconductor (CMOS) standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power-down when deselected ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free 54-pin thin small outline package (TSOP) Type II and 48-ball very fine-pitch ball grid array (VFBGA) packages. Functional Description The CY7C1069DV33 is a high performance CMOS Static RAM organized as 2,097,152 words by 8 bits. To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW.