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CY7C11631KV18 - 18-Mbit QDR II SRAM 4-Word Burst Architecture

This page provides the datasheet information for the CY7C11631KV18, a member of the CY7C11611KV18 18-Mbit QDR II SRAM 4-Word Burst Architecture family.

Description

The CY7C11611KV18, CY7C11761KV18, CY7C11631KV18, and CY7C11651KV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture.

Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array.

Features

  • Functional.

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Datasheet preview – CY7C11631KV18

Datasheet Details

Part number CY7C11631KV18
Manufacturer Cypress Semiconductor
File Size 918.04 KB
Description 18-Mbit QDR II SRAM 4-Word Burst Architecture
Datasheet download datasheet CY7C11631KV18 Datasheet
Additional preview pages of the CY7C11631KV18 datasheet.

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Full PDF Text Transcription

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18-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 ® Features ■ Functional Description The CY7C11611KV18, CY7C11761KV18, CY7C11631KV18, and CY7C11651KV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations.
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