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CY7C1318JV18 Datasheet

Manufacturer: Cypress (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

CY7C1318JV18 datasheet preview

Datasheet Details

Part number CY7C1318JV18
Datasheet CY7C1318JV18 CY7C1316JV18 Datasheet (PDF)
File Size 660.79 KB
Manufacturer Cypress (now Infineon)
Description 18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1318JV18 page 2 CY7C1318JV18 page 3

CY7C1318JV18 Overview

The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K.

CY7C1318JV18 Key Features

  • 2M x 8 CY7C1916JV18
  • 2M x 9 CY7C1318JV18
  • 1M x 18 CY7C1320JV18
  • 512K x 36
Cypress (now Infineon) logo - Manufacturer

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CY7C1318AV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture
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CY7C1318CV18 (CY7C1xxxCV18) 18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1318KV18 18-Mbit DDR II SRAM Two-Word Burst Architecture
CY7C131 1K x 8 Dual-Port Static RAM
CY7C1310BV18 1.8V Synchronous Pipelined SRAM
CY7C1311AV18 (CY7C131xAV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1311BV18 (CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1311CV18 (CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1311JV18 (CY7C1x1xJV18) 18-Mbit QDR II SRAM 4-Word Burst Architecture

CY7C1318JV18 Distributor

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