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CY7C1318KV18 Datasheet 18-Mbit DDR II SRAM Two-Word Burst Architecture

Manufacturer: Cypress (now Infineon)

Download the CY7C1318KV18 datasheet PDF. This datasheet also includes the CY7C1316KV18 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (CY7C1316KV18_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The CY7C1316KV18, CY7C1916KV18, CY7C1318KV18, and CY7C1320KV18 are 1.8 V synchronous pipelined SRAM equipped with DDR II architecture.

The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter.

Addresses for read and write are latched on alternate rising edges of the input (K) clock.

Overview

 CY7C1316KV18, CY7C1916KV18 CY7C1318KV18, CY7C1320KV18 18-Mbit DDR II SRAM Two-Word Burst Architecture 18-Mbit DDR II SRAM Two-Word Burst.

Key Features

  • Configurations CY7C1316KV18.
  • 2 M × 8 CY7C1916KV18.
  • 2 M × 9 CY7C1318KV18.
  • 1 M × 18 CY7C1320KV18.
  • 512 K × 36 18-Mbit density (2 M × 8, 2 M × 9, 1 M × 18, 512 K × 36) 333-MHz clock for high bandwidth Two-word burst for reducing address bus frequency Double data rate (DDR) interfaces  (data transferred at 666 MHz) at 333 MHz Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only Two input clocks for out.