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CY7C1323BV25 Datasheet 18-Mbit 4-Word Burst SRAM

Manufacturer: Cypress (now Infineon)

General Description

• 18-Mbit Density (512 Kbit x 36) • 167-MHz Clock for high bandwidth • 4-Word Burst for reducing address bus frequency • Double Data Rate (DDR) interfaces (data transferred at 333 MHz @ 167 MHz) • Two input clocks (K and K) for precise DDR timing – SRAM uses rising edges only • Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches.

• Separate Port Selects for depth expansion • Synchronous internally self-timed writes • 2.5V core power supply with HSTL Inputs and Outputs • Available in 165-ball FBGA package (13 x 15 x 1.4 mm) • Variable drive HSTL output buffers • Expanded HSTL output voltage (1.4V–1.9V) • JTAG 1149.1 compatible test access port Configuration CY7C1323BV25 - 256K x 36 The CY7C1323BV25 is a 2.5V Synchronous Pipelined SRAM equipped with DDR-I (Double Data Rate) architecture.

The DDR-I architecture consists

Overview

CY7C1323BV25 18-Mbit 4-Word Burst SRAM with DDR-I Architecture.

Key Features

  • Functional.