CY7C1386D Description
The CY7C1386D/CY7C1387D SRAM integrates 512K × 36/1M × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive edge triggered clock input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining chip enable (CE1), depth expansion chip enables (CE2 and CE3),...
CY7C1386D Key Features
- Supports bus operation up to 200 MHz
- Available speed grades are 200, and 167 MHz
- Registered inputs and outputs for pipelined operation
- Optimal for performance (double-cycle deselect)
- Depth expansion without wait state
- 3.3 V core power supply (VDD)
- 2.5 V or 3.3 V I/O power supply (VDDQ)
- Fast clock-to-output times
- 3 ns (for 200 MHz device)
- Provides high performance 3-1-1-1 access rate