Datasheet Details
| Part number | CY7C225A |
|---|---|
| Manufacturer | Cypress (now Infineon) |
| File Size | 225.30 KB |
| Description | 512 x 8 Registered PROM |
| Datasheet | CY7C225A_CypressSemiconductor.pdf |
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Overview: 1CY7C225A CY7C225A 512 x 8 Registered PROM.
| Part number | CY7C225A |
|---|---|
| Manufacturer | Cypress (now Infineon) |
| File Size | 225.30 KB |
| Description | 512 x 8 Registered PROM |
| Datasheet | CY7C225A_CypressSemiconductor.pdf |
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The CY7C225A is a high-performance 512-word by 8-bit electrically programmable read only memory packaged in a slim 300-mil plastic or hermetic DIP, 28-pin leadless chip carrier, and 28-pin PLCC.
The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.
The CY7C225A replace
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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CY7C225 | 512 x 8 Registered PROM | Cypress |
| Part Number | Description |
|---|---|
| CY7C2245KV18 | 36-Mbit QDR II+ SRAM Four-Word Burst Architecture |
| CY7C2262XV18 | 36-Mbit QDR II+ Xtreme SRAM Two-Word Burst Architecture |
| CY7C2263KV18 | 36-Mbit QDR II+ SRAM Four-Word Burst Architecture |
| CY7C2263XV18 | 36-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture |
| CY7C2264XV18 | 36-Mbit QDR II+ Xtreme SRAM Two-Word Burst Architecture |
| CY7C2265KV18 | 36-Mbit QDR II+ SRAM Four-Word Burst Architecture |
| CY7C2265XV18 | 36-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture |
| CY7C2268KV18 | 36-Mbit DDR II+ SRAM Two-Word Burst Architecture |
| CY7C2270KV18 | 36-Mbit DDR II+ SRAM Two-Word Burst Architecture |
| CY7C2163KV18 | 18-Mbit QDR II+ SRAM Four-Word Burst Architecture |