CY7C245A Datasheet | Cypress

Features - Windowed for reprogrammability - CMOS for optimum speed/power - High speed - 15-ns address set-up - 10-ns clock to output - Low power - 330 m W (mercial) for -25 ns - 660 m W (military) - Programmable synchronous or asynchronous output enable - On-chip edge-triggered registers - Programmable asynchronous register (INIT) - EPROM technology, 100% programmable - Slim, 300-mil, 24-pin plastic or hermetic DIP - 5V ±10% VCC, mercial and military - TTL-patible I/O - Direct replacement for bipolar PROMs - Capable of withstanding greater than 2001V static discharge Logic Block Diagram INIT A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 CP COLUMN ADDRESS ADDRESS DECODER PROGRAMMABLE INITIALIZE WORD ROW ADDRESS PROGRAMMABLE ARRAY MULTIPLEXER O Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light the PROM is erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. The CY7C245A replaces bipolar devices and offers the advantages of lower power, reprogrammability, superior performance and high programming yield. The EPROM cell requires only 12.5V for the supervoltage, and low current requirements allow gang programming. The EPROM cells allow each memory location to be tested 100%, because each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer programming the product will meet AC specification limits. The CY7C245A has an asynchronous initialize function (INIT). This function acts as a 2049th 8-bit word loaded into the on-chip register. It is user programmable with any desired word, or may be used as a PRESET or CLEAR function on the outputs. INIT is triggered by a low level, not an...