CY7C43662
Key Features
- High-speed, low-power, bidirectional, First-In, First-Out (FIFO) memories
- 1Kx36x2 (CY7C43642)
- 4Kx36x2 (CY7C43662)
- 16Kx36x2 (CY7C43682)
- 0.35-micron CMOS for optimum speed/power
- High speed 133-MHz operation (7.5-ns read/write cycle times)
- Low power - ICC= 100 mA - ISB= 10 mA
- Fully asynchronous and simultaneous read and write operation permitted
- Mailbox bypass register for each FIFO
- Parallel Programmable Almost Full and Almost Empty flags
