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CY9C6264 - 8K X 8 Magnetic Nonvolatile CMOS RAM

General Description

The CY9C6264 is a high-performance CMOS nonvolatile RAM employing an advanced magnetic RAM (MRAM) process.

An MRAM is nonvolatile memory that operates as a RAM.

Key Features

  • 100% form-, fit-, and function-compatible with 8K × 8 micropower SRAM CY9C6264.
  • Fast Read and Write access: 70 ns.
  • Voltage range: 4.5V.
  • 5.5V operation.
  • Low active power: 495 mW (max. ) www. DataSheet4U. com.
  • Low standby power, CMOS: 825 µW (max. ).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY CY9C6264 8K x 8 Magnetic Nonvolatile CMOS RAM Features • 100% form-, fit-, and function-compatible with 8K × 8 micropower SRAM CY9C6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 495 mW (max.) www.DataSheet4U.com — Low standby power, CMOS: 825 µW (max.) Description The CY9C6264 is a high-performance CMOS nonvolatile RAM employing an advanced magnetic RAM (MRAM) process. An MRAM is nonvolatile memory that operates as a RAM. It provides data retention for more than 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM, EEPROM, Flash and FeRAM. Its fast writes and high write cycle endurance makes it superior to other types of nonvolatile memory.