Datasheet Summary
4-Mbit (256K × 16) F-RAM Memory
4-Mbit (256K × 16) F-RAM Memory
Features
- 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 16
- Configurable as 512K × 8 using UB and LB
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention (see the Data Retention and Endurance table)
- NoDelay™ writes
- Page mode operation to 25-ns cycle time
- Advanced high-reliability ferroelectric process
- SRAM patible
- Industry-standard 256K × 16 SRAM pinout
- 55-ns access time, 110-ns cycle time
- Advanced Features
- Software-programmable block write-protect
- Superior to battery-backed SRAM modules
- No battery concerns
- Monolithic reliability
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