Datasheet Summary
4-Kbit (512 × 8) Serial (I2C) F-RAM
4-Kbit (512 × 8) Serial (I2C) F-RAM
Features
- 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention (See Data Retention and Endurance on page 10)
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
- Fast 2-wire Serial interface (I2C)
- Up to 1-MHz frequency
- Direct hardware replacement for serial (I2C) EEPROM
- Supports legacy timings for 100 kHz and 400 kHz
- Low power consumption
- 100 A active current at 100 kHz
- 4 A (typ) standby current
- Voltage operation: VDD = 4.5 V to 5.5 V
- AEC-Q100 grade 3 qualified
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