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FM24W256 - 256-Kbit (32 K x 8) Serial (I2C) F-RAM

General Description

The FM24W256 is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process.

Key Features

  • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8.
  • High-endurance 100 trillion (1014) read/writes.
  • 151-year data retention (See the Data Retention and Endurance table).
  • NoDelay™ writes.
  • Advanced high-reliability ferroelectric process.
  • Fast 2-wire Serial interface (I2C).
  • Up to 1-MHz frequency.
  • Direct hardware replacement for serial (I2C) EEPROM.
  • Supports legacy timings for 100 kHz and 400 kHz.
  • Low power consumpti.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
FM24C04B 4-Kbit (512 x 8) Serial (I2C) F-RAM
FM24C16B 16-Kbit (2K x 8) Serial (I2C) F-RAM
FM24C64B 64-Kbit (8K x 8) Serial (I2C) F-RAM
FM24CL04B 4-Kbit (512 x 8) Serial (I2C) F-RAM
FM24CL16B 16-Kbit (2K x 8) Serial (I2C) F-RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FM24W256 256-Kbit (32 K × 8) Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) F-RAM Features ■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Fast 2-wire Serial interface (I2C) ❐ Up to 1-MHz frequency ❐ Direct hardware replacement for serial (I2C) EEPROM ❐ Supports legacy timings for 100 kHz and 400 kHz ■ Low power consumption ❐ 100 A active current at 100 kHz ❐ 15 A (typ) standby current ■ Wide voltage operation: VDD = 2.7 V to 5.