FM25L16B
Overview
- 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process
- Very fast serial peripheral interface (SPI) ❐ Up to 20 MHz frequency ❐ Direct hardware replacement for serial flash and EEPROM ❐ Supports SPI mode 0 (0,0) and mode 3 (1,1)
- Sophisticated write protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4, 1/2, or entire array
- Low power consumption ❐ 200 A active current at 1 MHz ❐ 3 A (typ) standby current
- Low-voltage operation: VDD = 2.7 V to 3.6 V
- Industrial temperature: -40 °C to +85 °C
- Packages ❐ 8-pin small ou
