Datasheet Details
| Part number | FM25V10 |
|---|---|
| Manufacturer | Cypress (now Infineon) |
| File Size | 877.21 KB |
| Description | 1Mb Serial 3V F-RAM Memory |
| Datasheet |
 FM25V10 Datasheet
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General Description
The FM25V10 is a 1-Mbit nonvolatile memory employing an advanced ferroelectric process.
A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM.
Key Features
- 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8.
- High-endurance 100 trillion (1014) read/writes.
- 151-year data retention (See Data Retention and Endurance on page 16).
- NoDelay™ writes.
- Advanced high-reliability ferroelectric process.
- Very fast serial peripheral interface (SPI).
- Up to 40-MHz frequency.
- Direct hardware replacement for serial flash and EEPROM.
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1).
- Sophistic.