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FM28V100 - 1-Mbit (128 K x 8) F-RAM Memory

Key Features

  • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 8.
  • High-endurance 100 trillion (1014) read/writes.
  • 151-year data retention (see the Data Retention and Endurance table).
  • NoDelay™ writes.
  • Page mode operation to 30 ns cycle time.
  • Advanced high-reliability ferroelectric process.
  • SRAM compatible.
  • Industry-standard 128 K × 8 SRAM pinout.
  • 60-ns access time, 90-ns cycle time.
  • Superior to battery-backed SRAM modules.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
FM28V102A 1-Mbit (64 K x 16) F-RAM Memory
FM28V020 256-Kbit (32 K x 8) F-RAM Memory
FM28V202A 2-Mbit (128 K x 16) F-RAM Memory
FM22L16 4-Mbit (256K x 16) F-RAM Memory
FM22LD16 4-Mbit (256K x 16) F-RAM Memory

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FM28V100 1-Mbit (128 K × 8) F-RAM Memory 1-Mbit (128 K × 8) F-RAM Memory Features ■ 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page mode operation to 30 ns cycle time ❐ Advanced high-reliability ferroelectric process ■ SRAM compatible ❐ Industry-standard 128 K × 8 SRAM pinout ❐ 60-ns access time, 90-ns cycle time ■ Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface mount solution, no rework steps ❐ Superior for moisture, shock, and vibration ■ Low power consumption ❐ Active current 7 mA (typ) ❐ Standby current 90 A (typ) ■ Low-voltage operation: VDD = 2.