FM31L276 Datasheet | Cypress

Features - 64-Kbit/256-Kbit ferroelectric random access memory (F-RAM) - Logically organized as 8K × 8 (FM31L276)/ 32K × 8 (FM31L278) - High-endurance 100 trillion (1014) read/writes - 151-year data retention (See Data Retention and Endurance on page 29) - No Delay™ writes - Advanced high-reliability ferroelectric process - High Integration Device Replaces Multiple Parts - Serial nonvolatile memory - Real time clock (RTC) - Low voltage reset - Watchdog timer - Early power-fail warning/NMI - Two 16-bit event counter - Serial number with write-lock for security - Real-time Clock/Calendar - Backup current at 2 V: 1.15 A at +25 C - Seconds through centuries in BCD format - Tracks leap years through 2099 - Uses standard 32.768 k Hz crystal (6 p F/12.5 p F) - Software calibration - Supports battery or capacitor backup - Processor panion - Active-low reset output for VDD and watchdog - Programmable low-VDD reset trip point - Manual reset filtered and debounced - Programmable watchdog timer - Dual Battery-backed event counter tracks system intrusions or other events - parator for power-fail interrupt - 64-bit programmable serial number with lock - Fast 2-wire serial interface (I2C) - Up to 1-MHz frequency - Supports legacy timings for 100 k Hz and 400 k Hz - RTC, Supervisor controlled via I2C interface - Device select pins for up to 4 memory devices - Low power consumption - 1.5 m A active current at 1 MHz - 120 A standby current - Operating voltage: VDD = 2.7 V to 3.6 V - Industrial...