GVT71256T18 Description
The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valu.
- Part: GVT71256T18
- Manufacturer: Cypress
- Size: 283.14 KB
Related Cypress Datasheets
| Part Number | Description |
|---|---|
| GVT71256B36 | (GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM |
| GVT71256C36 | (GVT7xxxx) 256K X 36/512K X 18 Pipelined SRAM |
| GVT71256D36 | (GVT7xxxx) 256K x 36 / 512K x 18 Pipelined SRAM |
| GVT71256E18 | (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM |
| GVT71256ZB36 | (GVT7xxxx) 256K x 36 / 512K x 18 Flow Thru SRAM |