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S29GL512P - Page Flash

Download the S29GL512P datasheet PDF. This datasheet also covers the S29GL01GP variant, as both devices belong to the same page flash family and are provided as variant models within a single manufacturer datasheet.

General Description

The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology.

These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S29GL01GP-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
S29GL512P Page Mode Flash Memory SPANSION
S29GL512N Page Mode Flash Memory SPANSION
S29GL512S 512Mb Flash Memory Infineon
S29GL512S 512-Mbit Non-Volatile Memory SPANSION
S29GL512T 512Mb (64MB) GL-T Flash Infineon

Other Datasheets by Cypress (now Infineon)

Part Number Description
S29GL512N 3.0V single power flash memory
S29GL512S 3.0V GL-S Flash Memory
S29GL512T MirrorBit Eclipse Flash Memory
S29GL01GP Page Flash
S29GL01GS 3.0V GL-S Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
S29GL01GP S29GL512P S29GL256P S29GL128P 1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash with 90 nm MirrorBit Process Technology General Description The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption. Distinctive Characteristics  Single 3V read/program/erase (2.7-3.