Datasheet4U Logo Datasheet4U.com

S29JL064J - Simultaneous Read/Write Flash

Datasheet Summary

Description

The S29JL064J is a 64 Mbit, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of 8 bits each.

DQ0; byte mode data appears on DQ7

DQ0.

Features

  • Supports Common Flash Memory Interface (CFI).
  • Erase suspend/erase resume.
  • Suspends erase operations to read data from, or program data to, a sector that is not being erased, then resumes the erase operation.
  • Data# polling and toggle bits.
  • Provides a software method of detecting the status of program or erase operations.
  • Unlock bypass program command.
  • Reduces overall programming time when issuing multiple program command sequences Hardware Features.

📥 Download Datasheet

Datasheet preview – S29JL064J

Datasheet Details

Part number S29JL064J
Manufacturer Cypress Semiconductor
File Size 721.68 KB
Description Simultaneous Read/Write Flash
Datasheet download datasheet S29JL064J Datasheet
Additional preview pages of the S29JL064J datasheet.

📁 Similar Datasheet

  • S29JL064J - Simultaneous Read/Write Flash Memory (SPANSION)
  • S29JL064H - 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only (SPANSION)
  • S29JL032H - 32M BIT CMOS 3.0V FLASH MEMORY (SPANSION)
  • S29JL032J - Simultaneous Read/Write Flash Memory (SPANSION)
  • S29 - Schottky Rectifiers (Fairchild Semiconductor)
  • S290AJ1-LE1 - TFT LCD Module (INNOLUX)
  • S290AJ1-LE2 - TFT LCD Module (INNOLUX)
  • S291-C125 - Pro M Miniature Circuit Breakers (ABB)
  • S291-Cxxx - Pro M Miniature Circuit Breakers (ABB)
  • S2916 - Tx-Rx FEM (Smarter Micro)
Other Datasheets by Cypress Semiconductor

Full PDF Text Transcription

Click to expand full text
S29JL064J Distinctive Characteristics 64-Mbit (8M × 8-Bit/4M × 16-Bit), 3 V, Simultaneous Read/Write Flash Architectural Advantages  Simultaneous Read/Write operations – Data can be continuously read from one bank while executing erase/program functions in another bank – Zero latency between read and write operations  Flexible bank architecture – Read may occur in any of the three banks not being programmed or erased – Four banks may be grouped by customer to achieve desired bank divisions  Boot sectors – Top and bottom boot sectors in the same device – Any combination of sectors can be erased  Manufactured on 0.
Published: |