Datasheet Summary
S29VS064R S29XS064R
64 Mbit (4M x 16-bit), 1.8 V, Multiplexed, Burst, MirrorBit® Flash
Distinctive Characteristics
- Single 1.8 volt read, program and erase (1.7 to 1.95 volt)
- VersatileIO™ Feature
- Device generates data output voltages and tolerates data input voltages as determined by the voltage on the VCCQ pin
- 1.8 V patible I/O signals
- Address and Data Interface Options
- Address and Data Multiplexed for reduced I/O count (ADM) S29VS-R
- Address-High, Address-Low, Data Multiplexed for minimum I/O count (AADM) S29XS-R
- Simultaneous Read/Write operation
- Data can be continuously read from one bank while executing erase/program functions in other bank
- Zero latency between...