S34ML08G1
Overview
The Cypress S34ML08G1 8-Gb NAND is offered in 3.3 VCC with x8 I/O interface. This document contains information for the S34ML08G1 device, which is a dual-die stack of two S34ML04G1 die.
- Electronic Signature - Manufacturer ID: 01h
- Operating Temperature - Industrial: -40 °C to 85 °C - Automotive: -40 °C to 105 °C Performance
- Page Read / Program - Random access: 25 µs (Max) - Sequential access: 25 ns (Min) - Program time / Multiplane Program time: 200 µs (Typ)
- Block Erase / Multiplane Erase (S34ML04G1) - Block Erase time: 3.5 ms (Typ)
- Reliability - 100,000 Program / Erase cycles (Typ) (with 1 bit / 512 + 16 byte ECC) - 10 Year Data retention (Typ) - Blocks zero and one are valid and will be valid for at least 1000 program-erase cycles with ECC
- Package Options - Lead Free and Low Halogen - 48-Pin TSOP 12 20 1.2 mm - 63-Ball BGA 9 11 1 mm Cypress Semiconductor Corporation
- 198 Champion Court Document Number
