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S99-50214 Datasheet

Manufacturer: Cypress (now Infineon)
S99-50214 datasheet preview

S99-50214 Details

Part number S99-50214
Datasheet S99-50214-CypressSemiconductor.pdf
File Size 869.59 KB
Manufacturer Cypress (now Infineon)
Description 512-Mbit (32M x 16-bit) 1.8V Flash Memory
S99-50214 page 2 S99-50214 page 3

S99-50214 Overview

The Spansion S99-50214 are Mirrorbit flash products fabricated on 90 nm process technology. These flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These products can operate up to 104 MHz and use a single VCC of 1.8 V that makes them ideal for today’s demanding wireless applications requiring higher density,...

S99-50214 Key Features

  • Single 1.8 V read/program/erase
  • 90 nm MirrorBit® Technology
  • Simultaneous Read/Write operation with zero latency
  • Random page read access mode of 8 words with 20 ns intra page access time
  • 32 Word / 64 Byte Write Buffer
  • Sixteen-bank architecture consisting of 32/16/8 Mwords for 512/256/128P, respectively
  • Four 16 Kword sectors at both top and bottom of memory array
  • 510/254/126 64 Kword sectors (WS512/256/128P)
  • Secured Silicon Sector region consisting of 128 words each for factory and 128 words for customer
  • mand set patible with JEDEC (42.4) standard

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