CY15B256Q Overview
VDD = 2.0 V to 3.6 V Automotive-A temperature: 40 C to +85 C 8-pin small outline integrated circuit (SOIC) package Restriction of hazardous substances (RoHS) pliant The CY15B256Q is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM.
CY15B256Q Key Features
- 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention (See the Data Retention and Endurance table)
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
- Very fast serial peripheral interface (SPI)
- Up to 40-MHz frequency
- Direct hardware replacement for serial flash and EEPROM
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
- Sophisticated write-protection scheme
