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CY62146DV30 - 4M Bit Static RAM

General Description

of read and write modes.

The CY62146DV30 is available in a 48-ball VFBGA, 44-pin TSOPII packages.

The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits.

Key Features

  • Very high speed: 45 ns.
  • Wide voltage range: 2.20V.
  • 3.60V.
  • Pin-compatible with CY62146CV30.
  • Ultra-low active power.
  • Typical active current: 1.5 mA @ f = 1 MHz.
  • Typical active current: 8 mA @ f = fmax.
  • Ultra low standby power.
  • Easy memory expansion with CE, and OE features.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power.
  • Packages offered 48-ball BGA and 44-pin TSOPII.

📥 Download Datasheet

📁 Similar Datasheet

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY62146G 4-Mbit (256K words x 16 bit) Static RAM
CY62146G-MoBL 4-Mbit (256K words x 16 bit) Static RAM
CY62146GE 4-Mbit (256K words x 16 bit) Static RAM
CY62146GESL 4-Mbit (256K words x 16 bit) Static RAM
CY62146GN 4-Mbit (256K x 16) Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62146DV30 4-Mbit (256K x 16) Static RAM Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62146CV30 • Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 8 mA @ f = fmax • Ultra low standby power • Easy memory expansion with CE, and OE features • Automatic power-down when deselected • CMOS for optimum speed/power • Packages offered 48-ball BGA and 44-pin TSOPII • Also available in Lead-free packages an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH).