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FM1808B Datasheet PDF

Cypress Semiconductor FM1808B

256-Kbit (32 K x 8) Bytewide F-RAM Memory

Part No. FM1808B
Datasheet FM1808B Download
Manufacturer
Cypress Semiconductor
Description 256-Kbit (32 K x 8) Bytewide F-RAM Memory
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FM1808B datasheet page 1 preview

FEATURES

● 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8
● High-endurance 100 trillion (1014) read/writes
● 151-year data retention (see the Data Retention and Endurance table)
● NoDelay™ writes
● Advanced high-reliability ferroelectric process
● SRAM and EEPROM compatible
● Industry-standard 32 K × 8 SRAM and EEPROM pinout
● 70-ns access time, 130-ns cycle time
● Superior to battery-backed SRAM modules
● No battery concerns
● Monolithic reliability
● True surface mount solution, no rework steps
● Superior for moisture, shock, and vibration
● Resistant to negative voltage undershoots
● Low power consumption
● Active current 15 mA (max)
● Standby current 25 A (typ)
● Voltage operation: VDD = 4.5 V to 5.5 V
● Industrial temperature: –40 C to +85 C
● 28-pin small outline integrated circuit (SOIC) packag
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