Cypress Semiconductor FM21LD16
The FM21LD16 is a 128 K × 16 nonvolatile memory that reads and writes similar to a standard SRAM. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). The FM21LD16 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system.| Part No. | FM21LD16 |
|---|---|
| Datasheet | FM21LD16 Download |
| Manufacturer |  Cypress Semiconductor |
| Description | 2-Mbit (128 K ?? 16) F-RAM Memory |
| Buy | Stock & Price |
FEATURES
● 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16● Configurable as 256 K × 8 using UB and LB
● High-endurance 100 trillion (1014) read/writes
● 151-year data retention (see the Data Retention and Endurance table)
● NoDelay™ writes
● Page mode operation to 30-ns cycle time
● Advanced high-reliability ferroelectric process
● SRAM compatible
● Industry-standard 128 K × 16 SRAM pinout
● 60-ns access time, 110-ns cycle time
● Advanced features
● Software-programmable block write-protect
● Superior to battery-backed SRAM modules
● No battery concerns
● Monolithic reliability
● True surface mount solution, no rework steps
● Superior for moisture, shock, and vibration
● Low power consumption
● Active current 8 mA (typ)
● Standby current 90 A (typ)
● Low-voltage operation: VDD = 2.7 V to 3.6 V
● Industrial temperature: –40 C to +85 C
● 48-ball fine-pitch ball grid array (FBGA) package
● Pin compatible with FM22LD16 (4-Mbit) and FM23MLD16 (8-Mbit)...
