Cypress Semiconductor FM22L16
4-Mbit (256K x 16) F-RAM Memory
| Part No. | FM22L16 |
|---|---|
| Datasheet | FM22L16 Download |
| Manufacturer |  Cypress Semiconductor |
| Description | 4-Mbit (256K x 16) F-RAM Memory |
| Buy | Stock & Price |
FEATURES
● 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 16● Configurable as 512K × 8 using UB and LB
● High-endurance 100 trillion (1014) read/writes
● 151-year data retention (see the Data Retention and Endurance table)
● NoDelay™ writes
● Page mode operation to 25-ns cycle time
● Advanced high-reliability ferroelectric process
● SRAM compatible
● Industry-standard 256K × 16 SRAM pinout
● 55-ns access time, 110-ns cycle time
● Advanced features
● Software-programmable block write-protect
● Superior to battery-backed SRAM modules
● No battery concerns
● Monolithic reliability
● True surface mount solution, no rework steps
● Superior for moisture, shock, and vibration
● Low power consumption
● Active current 8 mA (typ)
● Standby current 90 A (typ)
● Sleep mode current 5 A (max)
● Low-voltage operation: VDD = 2.7 V to 3.6 V
