Cypress Semiconductor FM24C04B
The FM24C04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24C04B performs write operations at bus speed.| Part No. | FM24C04B |
|---|---|
| Datasheet | FM24C04B Download |
| Manufacturer |  Cypress Semiconductor |
| Description | 4-Kbit (512 x 8) Serial (I2C) F-RAM |
| Buy | Stock & Price |
FEATURES
● 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8● High-endurance 100 trillion (1014) read/writes
● 151-year data retention (See Data Retention and Endurance on page 10)
● NoDelay™ writes
● Advanced high-reliability ferroelectric process
● Fast 2-wire Serial interface (I2C)
● Up to 1-MHz frequency
● Direct hardware replacement for serial (I2C) EEPROM
● Supports legacy timings for 100 kHz and 400 kHz
● Low power consumption
● 100 A active current at 100 kHz
● 4 A (typ) standby current
● Voltage operation: VDD = 4.5 V to 5.5 V
● AEC-Q100 grade 3 qualified
● Industrial temperature: –40 C to +85 C
● 8-pin small outline integrated circuit (SOIC) package
● Restriction of hazardous substances (RoHS) compliant Functional
DESCRIPTION
A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device.
