FEATURES
128K bit Ferroelectric Nonvolatile RAM Organized as 16,384 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 10 Year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 40 MHz Frequency Direct Hardware Replacement for Serial Flash SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme Hardware Protection Software Protection DESCRIPTION
A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. No write delays are incurred. Data is written to the memory array immediately after it has been transferred to the device. The next bus cycle may commence without the need for data polling. The product offers very high write endurance, orders of magnitude more endurance than Serial Flash. Also, F-RAM exhibits lower power consumption than Serial Flash. These capabilities make the FM25V01 ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation.
Cypress Semiconductor
