Cypress Semiconductor FM25V10
The FM25V10 is a 1-Mbit nonvolatile memory employing an advanced ferroelectric process. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the FM25V10 performs write operations at bus speed.| Part No. | FM25V10 |
|---|---|
| Datasheet | FM25V10 Download |
| Manufacturer |  Cypress Semiconductor |
| Description | 1Mb Serial 3V F-RAM Memory |
| Buy | Stock & Price |
FEATURES
● 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8● High-endurance 100 trillion (1014) read/writes
● 151-year data retention (See Data Retention and Endurance on page 16)
● NoDelay™ writes
● Advanced high-reliability ferroelectric process
● Very fast serial peripheral interface (SPI)
● Up to 40-MHz frequency
● Direct hardware replacement for serial flash and EEPROM
● Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
● Sophisticated write protection scheme
● Hardware protection using the Write Protect (WP) pin
● Software protection using Write Disable instruction
● Software block protection for 1/4, 1/2, or entire array
● Device ID and Serial Number
● Manufacturer ID and Product ID
● Unique Serial Number (FM25VN10)
● Low power consumption
● 300 A active current at 1 MHz
● 90 A (typ) standby current
● 5 A sleep mode current
● Low-voltage operation: VDD = 2.0 V to 3.6 V
● Industrial temperature: –40 C to +85 C
● Packages
● 8-pin small outline int...
