Cypress Semiconductor FM28V020
256-Kbit (32 K x 8) F-RAM Memory
FEATURES
● 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8● High-endurance 100 trillion (1014) read/writes
● 151-year data retention (see the Data Retention and Endurance table)
● NoDelay™ writes
● Page mode operation
● Advanced high-reliability ferroelectric process
● SRAM compatible
● Industry-standard 32 K × 8 SRAM pinout
● 70-ns access time, 140-ns cycle time
● Superior to battery-backed SRAM modules
● No battery concerns
● Monolithic reliability
● True surface mount solution, no rework steps
● Superior for moisture, shock, and vibration
● Resistant to negative voltage undershoots
● Low power consumption
● Active current 5 mA (typ)
● Standby current 90 A (typ)
● Low-voltage operation: VDD = 2.0 V to 3.6 V
● Industrial temperature: –40 C to +85 C
● Packages:
● 28-pin small outline integrated circuit (SOIC) pack