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FM28V100 Datasheet PDF

Cypress Semiconductor FM28V100

1-Mbit (128 K x 8) F-RAM Memory

Part No. FM28V100
Datasheet FM28V100 Download
Manufacturer
Cypress Semiconductor
Description 1-Mbit (128 K x 8) F-RAM Memory
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FM28V100 datasheet page 1 preview

FEATURES

● 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 8
● High-endurance 100 trillion (1014) read/writes
● 151-year data retention (see the Data Retention and Endurance table)
● NoDelay™ writes
● Page mode operation to 30 ns cycle time
● Advanced high-reliability ferroelectric process
● SRAM compatible
● Industry-standard 128 K × 8 SRAM pinout
● 60-ns access time, 90-ns cycle time
● Superior to battery-backed SRAM modules
● No battery concerns
● Monolithic reliability
● True surface mount solution, no rework steps
● Superior for moisture, shock, and vibration
● Low power consumption
● Active current 7 mA (typ)
● Standby current 90 A (typ)
● Low-voltage operation: VDD = 2.0 V to 3.6 V
● Industrial temperature: –40 C to +85 C Logic Block Diagram
● 32-pin thin small outline package (TSOP) Type I
● Restriction of hazardo
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