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S34ML04G3 - SLC NAND Flash Memory

General Description

2.

3.

Key Features

  • Multiplane Program and Erase commands.
  • Copy Back Program.
  • Multiplane Copy Back Program.
  • Reset (FFh) command is required after power-on as a first command Performance.
  • Page Read / Program.
  • Read Page Time (tR):.
  • 45 µs (Typ) / Single Plan.
  • 55 µs (Typ) / Multi Plane.
  • Program time / Multiplane Program time: 350 µs (Typ).
  • Block Erase / Multiplane Erase.
  • Block Erase time: 4 ms (Typ).
  • Reliability.
  • 60,000 Progra.

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Other Datasheets by Cypress (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE S34ML04G3 4 Gb, 3 V, 1-bit ECC, 2K Page Size, SLC NAND Flash Memory for Embedded Distinctive Characteristics  Density ❐ 4 Gb  Architecture ❐ Input / Output Bus Width: 8 bits ❐ Page Size • 4 Gb: (2048 + 128) bytes; 128-byte spare area ❐ Block Size: 64 Pages • 4 Gb: 128 KB + 8 KB ❐ Plane Size • 4 Gb: 2048 blocks per plane or (256 MB + 16 MB) ❐ Device Size • 4 Gb: 2 planes per device or 512 Mbyte  NAND Flash Interface ❐ Open NAND Flash Interface (ONFI) 1.0 compliant ❐ Address, Data, and Commands multiplexed  Supply voltage ❐ 3.3-V device: VCC = 2.7 V ~ 3.