FM22LD16
Overview
- 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 16 ❐ Configurable as 512K × 8 using UB and LB ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page mode operation to 25-ns cycle time ❐ Advanced high-reliability ferroelectric process
- SRAM compatible ❐ Industry-standard 256K × 16 SRAM pinout ❐ 55-ns access time, 110-ns cycle time
- Advanced features ❐ Software-programmable block write-protect
- Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface mount solution, no rework steps ❐ Superior for moisture, shock, and vibration
- Low power consumption ❐ Active current 8 mA (typ) ❐ Standby current 90 A (typ)
- Low-voltage operation: VDD = 2.7 V to 3.6 V
- Industrial temperature: -40
