FM31L276 Description
The FM31L276/FM31L278 device integrates F-RAM memory with the most monly needed functions for processor-based systems.
FM31L276 Key Features
- 64-Kbit/256-Kbit ferroelectric random access memory (F-RAM)
- Logically organized as 8K × 8 (FM31L276)/ 32K × 8 (FM31L278)
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention (See Data Retention and Endurance on page 29)
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
- High Integration Device Replaces Multiple Parts
- Serial nonvolatile memory
- Real time clock (RTC)
- Low voltage reset