RoHS compliant package
BVCEO IC RCESAT
-50V -3A 130mΩ
Symbol
BTB1184J3
Outline
TO-252
B：Base C：Collector E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperat.
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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 1/6
BTB1184J3
Features
• Low VCE(sat) • Excellent current gain characteristics • Complementary to BTD1760J3 • RoHS compliant package
BVCEO IC RCESAT
-50V -3A 130mΩ
Symbol
BTB1184J3
Outline
TO-252
B：Base C：Collector E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : *1.
BTB1184J3 Datasheet
