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BTB1188M3 - PNP Transistor

Key Features

  • Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -2A / -0.5A.
  • Excellent current gain characteristics.
  • Complementary to BTD1766M3.
  • Pb-free package Symbol BTB1188M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Power Dissipation Junction Temperature Storage Temperatur.

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Datasheet Details

Part number BTB1188M3
Manufacturer Cystech Electonics Corp
File Size 203.93 KB
Description PNP Transistor
Datasheet download datasheet BTB1188M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : 2006.02.15 Page No. : 1/5 BTB1188M3 Features • Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics • Complementary to BTD1766M3 • Pb-free package Symbol BTB1188M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Power Dissipation Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw=10ms BTB1188M3 Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg Limits -40 -30 -5 -2 -5 (Note 1) 0.