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BTC2383A3 - NPN Transistor

Key Features

  • High breakdown voltage, BVCEO≥ 200V.
  • Large continuous collector current capability.
  • Low collector saturation voltage.
  • Complementary to BTA1013A3.
  • Pb-free package Symbol BTC2383A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO V.

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Datasheet Details

Part number BTC2383A3
Manufacturer Cystech Electonics Corp
File Size 245.26 KB
Description NPN Transistor
Datasheet download datasheet BTC2383A3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C316 Issued Date : 2005.12.21 Revised Date : 2006.03.17 Page No. : 1/9 BTC2383A3 Features • High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability • Low collector saturation voltage • Complementary to BTA1013A3 • Pb-free package Symbol BTC2383A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB Pd Tj Tstg Limits 280 200 6 1 0.