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BTC3906M3 - NPN Transistor

General Description

The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage.

Key Features

  • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA).
  • Complement to BTA1514M3.
  • Pb-free package Symbol BTC3906M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 180 160 6 600 0.6 1 (Note 1) 2 (Note 2) 150 -55~+150 Unit V.

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Datasheet Details

Part number BTC3906M3
Manufacturer Cystech Electonics Corp
File Size 212.22 KB
Description NPN Transistor
Datasheet download datasheet BTC3906M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C208M3 www.DataSheet4U.com Issued Date : 2003.08.18 Revised Date :2006.12.04 Page No. : 1/5 BTC3906M3 Description The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage. Features • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) • Complement to BTA1514M3 • Pb-free package Symbol BTC3906M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 180 160 6 600 0.