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BTC4062N3 - NPN Transistor

Key Features

  • High Breakdown Voltage:BVCEO≥350V.
  • Complementary to BTA1722N3.
  • Pb-free package Symbol BTC4062N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 350 350 6 500 225 150 -55~+150 Unit V V V mA mW °C °C BTC4062N3 CYStek.

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Datasheet Details

Part number BTC4062N3
Manufacturer Cystech Electonics Corp
File Size 295.56 KB
Description NPN Transistor
Datasheet download datasheet BTC4062N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Spec. No. : C231N3R www.DataSheet4U.com Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 1/5 BTC4062N3 Features • High Breakdown Voltage:BVCEO≥350V • Complementary to BTA1722N3 • Pb-free package Symbol BTC4062N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 350 350 6 500 225 150 -55~+150 Unit V V V mA mW °C °C BTC4062N3 CYStek Product Specification CYStech Electronics Corp.