BTP6520A3 Datasheet | Cystech Electonics Corp

Features - High Breakdown Voltage:BVCEO≥-350V - plementary to BTN6517A3 Symbol BTP6520A3 TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -350 -350 -5 -500 625 150 -55~+150 Unit V V V m A m W °C °C CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 VCE(sat) 2 - VCE(sat) 3 - VCE(sat) 4 VBE(sat) 1 VBE(sat) 2 - VBE(sat) 3 VBE(on) h FE 1 h FE 2 - h FE 3 - h FE 4 - h FE 5 f T Cob Min. -350 -350 -5 20 30 30 20 15 40 Typ. Max. -50 -50 -0.3 -0.35 -0.5 -1.0 -0.75 -0.85 -0.9 -2 200 200 200 6 Unit V V V n A n A V V V V V V V V MHz p F Spec. No. : C321A3 .. Issued Date : 2003.04.12 Revised Date : Page No. : 2/4 Test Conditions IC=-100μA IC=-1m A IE=-10μA VCB=-250V VEB=-4V IC=-10m A, IB=-1m A IC=-20m A, IB=-2m A IC=-30m A, IB=-3m A IC=-50m A, IB=-5m A IC=-10m A, IB=-1m A IC=-20m A, IB=-2m A IC=-30m A, IB=-3m A VCE=-10V, IC=-100m A VCE=-10V, IC=-1m A VCE=-10V,IC=-10m A VCE=-10V,IC=-30m A VCE=-10V,IC=-50m A VCE=-10V,IC=-100m A VCE=-20V, IC=-10m A, f=20MHz VCB=-20V, IE=0A,f=1MHz - Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 VCE=10V Spec. No. : C321A3 .. Issued Date : 2003.04.12 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 100000 Saturation Voltage---(m V) VCE(SAT)@IC=10IB Current Gain---HFE 1 0.1 1 10 100 1000 Collector Current---IC(m A) 10 1 10 100 1000 Collector Current---IC(m A) Saturation Voltage vs Collector Current 1000 Saturation Voltage---(m V) 1000 On voltage vs Collector Current VBE(SAT)@IC=10IB...