BTP6520A3 - PNP Transistor

Features

High Breakdown Voltage:BVCEO≥-350V.
Complementary to BTN6517A3 Symbol BTP6520A3 TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -350 -350 -5 -500 625 150 -55~+150 Unit V V V mA mW °C °C BTP6520A3 CYStek Product Specification CYStech.

Cystech Electonics Corp

Datasheet Details

Part number	BTP6520A3
Manufacturer	Cystech Electonics Corp
File Size	175.38 KB
Description	PNP Transistor
Datasheet	BTP6520A3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor Spec. No. : C321A3 www.DataSheet4U.com Issued Date : 2003.04.12 Revised Date : Page No. : 1/4 BTP6520A3 Features • High Breakdown Voltage:BVCEO≥-350V • Complementary to BTN6517A3 Symbol BTP6520A3 TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -350 -350 -5 -500 625 150 -55~+150 Unit V V V mA mW °C °C BTP6520A3 CYStek Product Specification CYStech Electronics Corp.

Published: Mar 9, 2010 |