TIP31CE3 - 3A NPN Epitaxial Planar Power Transistor

Datasheet Summary

Description

TIP31CE3 is designed for use in general purpose amplifier and switching applications.

Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min) High current gain-bandwidth product , fT = 3M

Features

Symbol TIP31CE3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP IB PD.

Cystech Electonics Corp

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Datasheet Details

Part number	TIP31CE3
Manufacturer	Cystech Electonics Corp
File Size	172.39 KB
Description	3A NPN Epitaxial Planar Power Transistor
Datasheet	TIP31CE3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. 3A NPN Epitaxial Planar Power Transistor www.DataSheet4U.com Issued Date : 2003.09.04 Revised Date : Page No. : 1/4 Spec. No. : C609E3 TIP31CE3 Description TIP31CE3 is designed for use in general purpose amplifier and switching applications. • Low collector-emitter saturation voltage, VCE(sat) = 1.

Published: Mar 6, 2010 |