• Part: TIP31CE3
  • Description: 3A NPN Epitaxial Planar Power Transistor
  • Category: Transistor
  • Manufacturer: Cystech Electonics Corp
  • Size: 172.39 KB
Download TIP31CE3 Datasheet PDF
Cystech Electonics Corp
TIP31CE3
Description TIP31CE3 is designed for use in general purpose amplifier and switching applications. - Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A - High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min) - High current gain-bandwidth product , f T = 3MHz(min) @ IC = 500m A Features Symbol Outline TO-220AB B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 100 100 5 3 5 (Note 1) 1 2 40 62.5 3.125 150 -55~+150 Unit V V V A A W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics...