Low voltage drive(2.5V drive) makes this device ideal for portable equipment.
High speed switching
ESD protected device
Pb-free lead plating & halogen-free package
30V 100mA 3.4Ω (TYP) 6.9Ω (TYP)
Symbol
2SK3541Y3
G
Outline
SOT-723 D
G：Gate
N-Channel Enhancement Mode Field Effect Transistor
Chenmko Enterprise
Other Datasheets by Cystech Electonics
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CYStech Electronics Corp.
Spec. No. : C800Y3 Issued Date : 2011.12.22 Revised Date : Page No. : 1/8
ESD protected N-Channel Enhancement Mode MOSFET
2SK3541Y3
BVDSS
ID
RDSON@4V
Description
RDSON@2.5V
• Low voltage drive(2.5V drive) makes this device ideal for portable equipment.
• High speed switching
• ESD protected device
• Pb-free lead plating & halogen-free package
30V 100mA 3.4Ω (TYP) 6.
2SK3541Y3 Datasheet
